| PART |
Description |
Maker |
| MH32V725BST-5 |
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM 超页模式2415919104 -位（33554432 - Word2 -位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| MH32S64PFJ-6L MH32S64PFJ-7 |
KPT 10C 10#20 SKT PLUG
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM 2147483648位（33554432 -文字4位）SynchronousDRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH32S64APFB-8 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM 2147483648位（33554432 -文字4位）SynchronousDRAM
|
Mitsubishi Electric, Corp.
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH32S72PHB-8 MH32S72PHB-10 MH32S72PHB-7 B99017 |
From old datasheet system
2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72DBFA-8 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 2415919104位（33554432 - Word2位）同步动态随机存储器
|
Mitsubishi Electric, Corp.
|
| MH2M365CXJ-7 MH2M365CNXJ-5 MH2M365CNXJ-6 MH2M365CN |
HYPER PAGE MODE 75497472-BIT ( 2097152-WORD BY 36-BIT ) DYNAMIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TC59S6404BFT/BFTL-80 TC59S6416BFT/BFTL-80 TC59S640 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM 1048576 / 2097152 / 4194304 - WORDSx4BANKSx16 / 8/4-BIT s同步动态随机存储器
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Han 16A Kunststoff-Abdeckkappe RoHS Compliant: NA
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2097152 WORDS x 32 BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| THM362020S-10 THM362020S-80 THM362020SG-10 THM3620 |
2097152 WORDS x 36BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 36BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 36BIT DYNAMIC RAM MODULE
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
